SiC MOSFET

Compared with traditional silicon based devices, the SiC MOSFET series products developed by third-generation planar technology have lower on resistance, higher switching speed, and better thermal conductivity, making them suitable for higher temperature and high voltage working environments.Prisemi includes discrete device products in the 650V and 1200V voltage ranges.The specific on-resistance (Rsp) of the product is less than 3.3m Ω * cm2, supporting driving voltages Vgs=15V and Vgs=18V, and the reliability test satisfy 1000h. It is suitable for fields such as photovoltaic(PV) energy storage and new energy.